Electronics and Electrical Communication Engg.

• Best Paper Award, IEEE ICEE
• INSPIRE Fellowship
• Golden Reviewers, IEEE TED
• Gold Medal, M.Tech
• INAE Innovative Project Award

Journal
• Normally-Off -(AlxGa1-x)2O3/Ga2O3Modulation-Doped Field-Effect Transistors with p-GaN Gate: Proposal and Investigation Meshram A.D., Sengupta A., Bhattacharyya T.K., Dutta G. By IEEE Transactions on Electron Devices 70 454-460 (2023)
• Normally-Off -(AlxGa1-x) 2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation Meshram A. D., Sengupta A. , Bhattacharyya T. K., Dutta G. By IEEE Transactions on Electron Devices 70 454-460 (2023)
• Realistic nonlocal refrigeration engine based on Coulomb-coupled systems Barman A., Halder S., Varshney S.K., Dutta G., Singha A. By Physical Review E 103 - (2021)
• Dual-gate -Ga2O3 nanomembrane transistors: device operation and analytical modelling Sengupta A., Bhattacharyya T. K., Dutta G. By Journal of Physics D: Applied Physics 54 405103- (2021)
• Modeling and Analysis of Normally-OFF p-GaN Gate AlGaN/GaN HEMT as an ON-Chip Capacitor Abdulsalam A., Karumuri N. , Dutta G. By IEEE Transactions on Electron Devices 67 3536-3540 (2020)
• Low Temperature and High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs Kanaga S., Dutta G. , Kushwah B. , Dasgupta N. , Dasgupta A. By IEEE Transactions on Device and Materials Reliability 20 613-621 (2020)
• Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique Sinha S., Dutta G., Mannam R., DasGupta N., Rao M.S.R. By Applied Surface Science 513 - (2020)
• Effect of post deposition annealing on the electrical properties of YSZ thin films deposited by pulsed laser technique Sinha S., Dutta G. , Mannam R. , Dasgupta N. , Rao M. By Applied Surface Science 513 1-8 (2020)
• On the Threshold Voltage of Normally-OFF AlGaN/GaN Heterostructure Field Effect Transistors (HFETs) with p-(Al)GaN gate Abdulsalam A., Dutta G. By Semiconductor Science and Technology 35 1-9 (2020)
• Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling Dutta G., Dasgupta N. , Dasgupta A. By IEEE Transactions on Electron Devices 64 3609-3615 (2017)
• A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization Karumuri N., Dutta G. , Dasgupta N. , Dasgupta A. By IEEE Transactions on Electron Devices 63 4226-4232 (2016)
• Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs Dutta G., Dasgupta N. , Dasgupta A. By IEEE Transactions on Electron Devices 63 4693-4701 (2016)
• Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs Dutta G., Dasgupta N. , Dasgupta A. By IEEE Transactions on Electron Devices 63 1450-1458 (2016)
• Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC Shukla M., Dutta G. , Mannam R. , Dasgupta N. By Thin Solid Films 607 1-6 (2016)
• Positive Shift in Threshold Voltage for Reactive-Ion-Sputtered Al2O3/AlInN/GaN MIS-HEMT Dutta G., Turuvekere S. , Karumuri N. , Dasgupta N. , Dasgupta A. By IEEE Electron Device Letters 35 1085-1087 (2014)
Book Chapter/Section
• AlGaN/GaN HEMT Fabrication and Challenges Dutta G., Kanaga S. , Dasgupta N. , Dasgupta A. By Handbook for III-V High Electron Mobility Transistor Technologies 133-171 (2019)
Workshop
• Effect of Device Parameters on the Threshold Voltage of Normally-OFF AlGaN-channel HEMTs enabled by p-AlGaN Gate Abdulsalam A., Dutta G. By 20th International Workshop on Physics of Semiconductor Devices: IWPSD 2019 - (2019)
• Effect of Field-Plates on Trap induced Current Collapse in AlGaN/GaN High Electron Mobility Transistors Das S., Dey K. , Singha A. , Dutta G. By 20th International Workshop on Physics of Semiconductor Devices: IWPSD 2019 - (2019)
• Low Temperature - High Pressure Oxidized Al2O3 as Gate Dielectric for AlInN/GaN MIS-HEMTs (Poster) Kanaga S., Dutta G. , Kushwah B. , Dasgupta N. , Dasgupta A. By International Workshop on Nitride Semiconductors (IWN 2018) - (2018)
• Trapping Phenomenon in AlInN/GaN HEMTs: A Study Based on Drain Current Transient Spectroscopy Khandelwal A., Dutta G. , Dasgupta A. , Dasgupta N. By International Workshop on the Physics of Semiconductor and Devices (IWPSD 2017) 219-223 (2017)
Conferences
• AlInN/GaN MIS-HEMTs with High Pressure Oxidized Aluminium as Gate Dielectric Kanaga S., Kushwah B. , Dutta G. , Dasgupta N. , Dasgupta A. By IEEE International Conference on Electronics, Computing and Communication Technologies (CONECCT) 1-4 (2018)
• Study of interface traps for GaN-based MIS-HEMTs with high pressure oxidized aluminium as gate dielectric Kushwah B., Kanaga S. , Dutta G. , Dasgupta A. , Dasgupta N. By IEEE International Conference on Emerging Electronics 1-4 (2018)
• Investigation of Trap Induced Gate Lag Phenomenon in AlGaN/GaN High Electron Mobility Transistors De K., Dutta G. By IEEE International Conference on Emerging Electronics 1-5 (2018)

Principal Investigator

• Ga2O3 Based Devices for High Power Applications